2 sc1008 transistor ? npn ? features power dissipation p cm : 0.8 w ? t amb=25 ??? collector current i cm : 0.7 a c ollector - base voltage v ( br ) cbo : 80 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit collector - base breakdown voltage v(br) cbo i c = 100 | a ? i e =0 80 v c ollector - emitter breakdown voltage v(br) ceo i c = 10 ma , i b =0 60 v emitter - base breakdown voltage v(br) e b o i e = 10 | a ? i c =0 8 v collector cut - off current i cbo v cb = 60 v , i e =0 0. 1 | a emitter cut - off current i eb o v e b = 5 v , i c =0 0.1 | a dc current gain h f e v ce = 2 v , i c = 50m a 40 400 collector - emitter saturation voltage v ce(sat) i c = 500ma , i b = 50 m a 0.4 v b ase - emitter saturation voltage v be(sat) i c = 500ma , i b = 50m a 1.1 v transition frequency f t v ce =10v, i c = 50ma 30 mhz classification of h fe rank r o y g range 40 - 80 70 - 140 120 - 240 200 - 400 1 2 3 to ?a 92 1.emitter 2. base 3 . collector ??y?e?a???e?t1? ?? d ong gu a n s hi h u a y u a n ele c tr on co., ltd . tel 86-769-5335378 86-769-5305266 fex 86-769-5316189
d b e a a1 c l d1 e e1 t o-92 p ackage outline dimensions symbol a a1 b c d d1 e e e1 l ? min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 dimensions in millimeters dimensions in inches 0.050typ 1.270typ |?
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